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參數(shù)資料
| 型號： | K1S1616BCA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位頁面模式統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 186K |
| 代理商： | K1S1616BCA |
Revision 0.0
December 2003
K1S1616BCA
- 5 -
U
t
RAM
Preliminary
DC AND OPERATING CHARACTERISTICS
1. Typical values are tested at V
CC
=1.8V,
T
A
=25
°
C and not guaranteed.
Item
Symbol
Test Conditions
Min
Typ
1)
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH,
ZZ=V
IH
, OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS
≤
0.2V,
ZZ
≥
Vcc-0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-0.2V
-
-
5
mA
I
CC2
Cycle time=t
RC
+3t
PC
, I
IO
=0mA, 100% duty, CS=V
IL
, ZZ=V
IH,
V
IN
=V
IL
or V
IH
-
30
mA
Output low voltage
V
OL
I
OL
=0.1mA
-
-
0.2
V
Output high voltage
V
OH
I
OH
=-0.1mA
1.4
-
-
V
Standby Current(CMOS)
I
SB1
2)
CS
≥
Vcc-0.2V, ZZ
≥
Vcc-0.2V, Other inputs=Vss to Vcc
-
-
80
μ
A
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤
20ns.
3. Undershoot: -1.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
1.7
1.8/2.0
2.1
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
1.4
-
Vcc+0.3
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
PRODUCT LIST
1. Lead Free Product
Industrial Temperature Product(-40~85
°
C)
Part Name
Function
K1S1616BCA-FI70
K1S1616BCA-FI85
K1S1616BCA-BI70
1)
K1S1616BCA-BI85
1)
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K1S2816BCM | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S2816BCM-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S321611C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321611C-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| k1s321611c-fi70000 | 制造商:Samsung Semiconductor 功能描述: |
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