參數(shù)資料
型號(hào): K1S161611A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Mx16 bit Uni-Transistor Random Access Memory
中文描述: 1Mx16位統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器
文件頁數(shù): 7/10頁
文件大小: 179K
代理商: K1S161611A
Revision 0.1
November 2003
K1S161611A
- 7 -
U
t
RAM
Preliminary
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
IL
, CS
2
=WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
1
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
3. t
OE
(max) is met only when
OE
becomes enabled after t
AA
(max).
4. If invalid address signals shorter than min. t
RC
are continuously repeated for over 4us, the device needs a normal read timing(t
RC
) or
needs to sustain standby state for min. t
RC
at least once in every 4us.
CS
2
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