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參數(shù)資料
| 型號： | K1S3216BCD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位頁面模式統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 168K |
| 代理商： | K1S3216BCD |
Revision 1.0
April 2005
K1S3216BCD
- 8 -
U
t
RAM
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
t
WC
t
CW
t
AW
t
BW
t
WP
t
DH
t
DW
t
WR
t
AS
CS
1
CS
2
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
UB, LB
WE
Data in
t
WC
t
CW
t
BW
t
WP
t
DH
t
DW
t
WR
t
AW
t
AS
CS
Data out
t
WC
t
AS
t
WR
Data Valid
t
DH
t
DW
t
WHP
t
WP
t
CW
t
AW
t
BW
t
CSHP
Data Undefined
t
WHZ
Data Undefined
t
OW
t
WHZ
t
OW
Data Undefined
Data Valid
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| K1S6416BCC-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
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