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參數(shù)資料
| 型號： | K1S3216B1C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 180K |
| 代理商： | K1S3216B1C |
Revision 0.1
June 2003
K1S3216B1C
- 9 -
U
t
RAM
Preliminary
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(4)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS
1
and low WE. A write begins when CS
1
goes low and WE goes low with asserting
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest tran-
sition when CS
1
goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS
1
going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
t
WR
is applied in case a write ends with CS
1
or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
t
AS(3)
CS1
CS2
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS
2
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AS(3)
CS
1
CS
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S3216B1C-I | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC-I | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S3216B1C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC-BI70000 | 制造商:Samsung Semiconductor 功能描述:SRAM ASYNC SGL 2.9V 64MBIT 4MX16 70NS 48FBGA - Tape and Reel |
| K1S64161CD-BI70000 | 制造商:Samsung Semiconductor 功能描述:64M 64M PSEUDO SRAM UTRAM(ASYNCH.LP X16 FBGA - Tape and Reel |
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