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參數(shù)資料
| 型號： | K1S32161CC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位頁面模式統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 185K |
| 代理商： | K1S32161CC |
Revision 0.0
July 2003
K1S32161CC
- 4 -
U
t
RAM
Preliminary
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.2 to V
CC
+0.3V
V
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 3.6V
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
Operating Temperature
T
A
-40 to 85
°
C
FUNCTIONAL DESCRIPTION
1. X means don
′
t care.(Must be low or high state)
CS1
CS2
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
X
1)
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X
1)
L
L
L
Din
Din
Word Write
Active
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相關代理商/技術參數(shù) |
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| K1S32161CC-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S32161CC-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
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