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參數(shù)資料
| 型號： | K1S3216B1C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 180K |
| 代理商： | K1S3216B1C |
Revision 0.1
June 2003
K1S3216B1C
- 7 -
U
t
RAM
Preliminary
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
IL
, CS
2
=WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
1
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
3. t
OE
(max) is met only when
OE
becomes enabled after t
AA
(max).
4. If invalid address signals shorter than min. t
RC
are continuously repeated for over 4us, the device needs a normal read timing(t
RC
) or
needs to sustain standby state for min. t
RC
at least once in every 4us.
CS
2
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| K1S3216B1C-I | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| K1S3216B1C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC-BI70000 | 制造商:Samsung Semiconductor 功能描述:SRAM ASYNC SGL 2.9V 64MBIT 4MX16 70NS 48FBGA - Tape and Reel |
| K1S64161CD-BI70000 | 制造商:Samsung Semiconductor 功能描述:64M 64M PSEUDO SRAM UTRAM(ASYNCH.LP X16 FBGA - Tape and Reel |
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