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參數(shù)資料
| 型號(hào)： | K1S2816BCM-I |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TPS54262EVM Evaluation Module |
| 中文描述： | 8M × 16位位的頁(yè)面模式統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 146K |
| 代理商： | K1S2816BCM-I |
Revision 1.0
April 2005
K1S2816BCM
- 2 -
U
t
RAM
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max.)
Operating
(I
CC2
, Max.)
K1S2816BCM-I
Industrial(-40~85
°
C)
1.7~2.0V
70ns
130
μ
A(<40
°
C)
40mA
TBD
250
μ
A(<85
°
C)
8M x 16 bit Page Mode Uni-Transistor CMOS RAM
GENERAL DESCRIPTION
The K1S2816BCM is fabricated by SAMSUNG
′
s advanced
CMOS technology using one transistor memory cell. The device
supports 4 page read operation and Industrial temperature
range. The device supports dual chip selection for user inter-
face. The device also supports internal Temperature Compen-
sated Self Refresh mode for the standby power saving at room
temperature range.
FEATURES
Process Technology: CMOS
Organization: 8M x16 bit
Power Supply Voltage: 1.7~2.0V
Three State Outputs
Compatible with Low Power SRAM
Support 4 page read mode
Package Type: TBD
PIN DESCRIPTION
1) Reserved for future use
Name
Function
Name
Function
CS1,CS2
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
22
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
1)
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
TBD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S321611C | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321611C-FI70 | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321611C-I | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S32161CC-FI70 | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S32161CC-I | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S321611C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321611C-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| k1s321611c-fi70000 | 制造商:Samsung Semiconductor 功能描述: |
| K1S321611C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321615M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
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