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參數(shù)資料
| 型號： | K1S3216B1C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位統(tǒng)一晶體管隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 180K |
| 代理商： | K1S3216B1C |
Revision 0.1
June 2003
K1S3216B1C
- 2 -
U
t
RAM
Preliminary
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Max.)
Operating
(I
CC2
, Max.)
K1S3216B1C-I
Industrial(-40~85
°
C)
1.7V~2.1V
70/85ns
100
μ
A
30mA
48-FBGA-6.0x8.0
2M x 16 bit Uni-Transistor CMOS RAM
GENERAL DESCRIPTION
The K1S3216B1C is fabricated by SAMSUNG
′
s advanced
CMOS technology using one transistor memory cell. The device
supports Industrial temperature range and 48 ball Chip Scale
Package for user flexibility of system design. The device also
supports dual chip selection for user interface.
FEATURES
Process Technology: CMOS
Organization: 2M x16 bit
Power Supply Voltage: 1.7V~2.1V
Three State Outputs
Compatible with Low Power SRAM
Dual Chip selection support
Package Type: 48-FBGA-6.0x8.0
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
1) Reserved for future use.
Name
Function
Name
Function
CS
1
,CS
2
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
20
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
1)
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS
1
LB
Control Logic
CS
2
Row
Addresses
Column Addresses
PIN DESCRIPTION
48-FBGA: Top View(Ball Down)
LB
OE
A0
A1
A2
CS
2
I/O9
UB
A3
A4
CS
1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
NC
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
A20
1
2
3
4
5
6
A
B
C
D
E
F
G
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S3216B1C-I | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC-I | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S3216B1C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC-BI70000 | 制造商:Samsung Semiconductor 功能描述:SRAM ASYNC SGL 2.9V 64MBIT 4MX16 70NS 48FBGA - Tape and Reel |
| K1S64161CD-BI70000 | 制造商:Samsung Semiconductor 功能描述:64M 64M PSEUDO SRAM UTRAM(ASYNCH.LP X16 FBGA - Tape and Reel |
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