參數(shù)資料
型號(hào)： HYB25M128160C
廠商： SIEMENS AG
英文描述： 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM)
中文描述： 128 - Mbit的直接的RDRAM（128兆直接的RDRAM）
文件頁數(shù)： 85/93頁
文件大小： 919K
代理商： HYB25M128160C
Data Book
85
2.00
Direct RDRAM
128/144-MBit (256K
×
16/18
×
32s)
This circuit does not include pin coupling effects that are often present in the packaged device.
Because coupling effects make the effective single-pin inductance
L
I
, and capacitance
C
I
, a
function of neighboring pins, these parameters are intrinsically data-dependent. For purposes of
specifying the device electrical loading on the Channel, the effective
L
I
and
C
I
are defined as the
worst-case values over all specified operating conditions.
L
I
is defined as the effective pin inductance based on the device pin assignment. Because the pad
assignment places each RSL signal adjacent to an AC ground (a GND or
V
DD
pin), the effective
inductance must be defined based on this configuration. Therefore,
L
I
assumes a loop with the RSL
pin adjacent to an AC ground.
C
I
is defined as the effective pin capacitance based on the device pin assignment. It is the sum of
the effective package pin capacitance and the IO pad capacitance.
Table 26
RSL Pin Parasitics
Parameter and Conditions - RSL Pins
Symbol
Limit Values
Unit
min.
max.
RSL effective input inductance
Mutual inductance between any DQA or DQB
RSL signals.
L
I
L
12
–
–
4.0
0.2
nH
nH
Mutual inductance between any ROW or COL
RSL signals.
Difference in
L
I
value between any RSL pins of
a single device.
RSL effective input capacitance
1)
-800
RSL effective input capacitance
1)
-711
RSL effective input capacitance
1)
-600
Mutual capacitance between any RSL signals.
–
0.6
nH
L
I
–
1.8
nH
1)
This value is a combination of the device IO circuitry and package capacitances.
C
I
2.0
2.0
2.0
–
2.4
2.4
2.6
0.1
pF
pF
pF
pF
C
12
C
I
Difference in C
I
value between average of
CTM/CFM and any RSL pins of a single device.
–
0.06
pF
RSL effective input resistance
R
I
4
15
Table 27
CMOS Pin Parasitics
Parameter and Conditions - CMOS Pins
Symbol
Limit Values
Unit
min.
max.
CMOS effective input inductance
CMOS effective input capacitance (SCK,CMD)
1)
CMOS effective input capacitance (SIO1, SIO0)
1)
L
I ,CMOS
C
I ,CMOS
C
I ,CMOS,SIO
–
8.0
nH
1)
This value is a combination of the device IO circuitry and package capacitances.
1.7
2.1
pF
–
7.0
pF
相關(guān)PDF資料
PDF描述
HYB25R128160C 128-MBit Direct RDRAM(128 M位直接RDRAM)
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HYB3116160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
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