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參數(shù)資料
| 型號： | HYB25M128160C |
| 廠商： | SIEMENS AG |
| 英文描述： | 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM) |
| 中文描述： | 128 - Mbit的直接的RDRAM（128兆直接的RDRAM） |
| 文件頁數(shù)： | 28/93頁 |
| 文件大小： | 919K |
| 代理商： | HYB25M128160C |
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Direct RDRAM
128/144-MBit (256K
×
16/18
×
32s)
Data Book
28
2.00
from the COLC packet with the RDA command. The RDA command should be treated as a RD
command in a COLC packet as well as a simultaneous (but offset) PRER command in an ROWR
packet when analyzing interactions with other packets.
Figure 14
(middle) shows an example of precharge with a WRA command. As in the RDA example,
a bank is activated with an ROWA packet on the ROW pins. Then, two dualocts are written with WR
commands in COLC packets on the COL pins. The second of these commands is a WRA, which
causes the bank to automatically precharge when the final write has been retired. The timing of this
automatic precharge is equivalent to a PRER command in an ROWR packet on the ROW pins that
is offset a time
t
OFFP
from the COLC packet that causes the automatic retire. The WRA command
should be treated as a WR command in a COLC packet as well as a simultaneous (but offset) PRER
command in an ROWR packet when analyzing interactions with other packets. Note that the
automatic retire is triggered by a COLC packet a time
t
RTR
after the COLC packet with the WR
command unless the second COLC contains a RD command to the same device. This is described
in more detail in
Figure 17
.
Figure 14
(bottom) shows an example of precharge with a PREX command in an COLX packet. A
bank is activated with an ROWA packet on the ROW pins. Then, a series of four dualocts are read
with RD commands in COLC packets on the COL pins. The fourth of these COLC packets includes
an COLX packet with a PREX command. This causes the bank to precharge with timing equivalent
to a PRER command in an ROWR packet on the ROW pins that is offset a time
t
OFFP
from the COLX
packet with the PREX command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB25R128160C | 128-MBit Direct RDRAM(128 M位直接RDRAM) |
| HYB 25M144180C | 144-MBit Direct RDRAM(144 M位直接RDRAM) |
| HYB25R144180C | 144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) |
| HYB3116160BST-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BST-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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