- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370785 > HYB25M128160C (SIEMENS AG) 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB25M128160C |
| 廠商： | SIEMENS AG |
| 英文描述： | 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM) |
| 中文描述： | 128 - Mbit的直接的RDRAM（128兆直接的RDRAM） |
| 文件頁(yè)數(shù)： | 49/93頁(yè) |
| 文件大?。?/td> | 919K |
| 代理商： | HYB25M128160C |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)當(dāng)前第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)
Data Book
49
2.00
Direct RDRAM
128/144-MBit (256K
×
16/18
×
32s)
Figure 27
INIT Register
0
15 14 13 12 11 10 9
SDE
VID
5
8
7
6
5
4
3
2
1
0
Control Register: INIT
DIS TSQ TEN LSR PSR NSR SRP PSX
0
SDEVID4...SDEVID0
SPD04273
Address: 021
16
PSX - Power Exit Select. PDN and NAP are exited with (=0) or without (=1)
a device address on the DQA5..0 pins. PDEV5 (on DQA5) selectes broadcast (1)
or directed (0) exit. For a directed exit, PDEV4..0 (on DQA4..0) is compared to
DEVID4..0 to select a device.
S
RP - SIO Repeater. Controls value on SIO; SIO1 = SIO0 if SRP = 1,
SIO1 = 1 if SRP = 0
SRP resets to 1.
NAP Self-Refresh. NSR = 1 enables self-refresh in NAP mode.
NSR can’t be set while in NAP mode.
NSR resets to 0.
PDN Self-Refresh. PSR=1 enables self-refresh in PDN mode.
PSR can’t be set while in PDN mode.
PSR resets to 0.
Low Power Self-Refresh. LSR = 1 enables longer self-refresh interval.
The self-refresh supply current is reduced.
LSR resets to 0.
Temperature Sensing Enable. TEN = 1 enables temperature sensing circuitry,
permitting the TSQ bit to be read to determine if a thermal trip point has been
exceeded.
TEN resets to 0.
Temperature Sensing Output. TSQ = 1 when a temperature trip point has been
exceeded, TSQ = 0 when it has not. TSQ is available during a current control
operation (see Figure 51).
RDRAM Disable. DIS = 1 causes RDRAM to ignore NAP/PDN exit sequence,
DIS = 0 permits normal operation. This mechanism disables an RDRAM.
DIS resets to 0.
SDEVID5..0 - Serial Device Identification. Compared to
SDEV5..0 serial address field of serial request packet for
register read/write transactions. This determines which
RDRAM is selected for the register read or write operation.
SDEVID resets to 3F
16
.
Read/write register.
Reset values are undefined except as affected by SIO
Reset as noted below. SETR/CLRR Reset does not
affect this register.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB25R128160C | 128-MBit Direct RDRAM(128 M位直接RDRAM) |
| HYB 25M144180C | 144-MBit Direct RDRAM(144 M位直接RDRAM) |
| HYB25R144180C | 144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) |
| HYB3116160BST-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BST-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。