參數(shù)資料
型號(hào): HYB25M128160C
廠商: SIEMENS AG
英文描述: 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM)
中文描述: 128 - Mbit的直接的RDRAM(128兆直接的RDRAM)
文件頁數(shù): 23/93頁
文件大?。?/td> 919K
代理商: HYB25M128160C
Data Book
23
2.00
Direct RDRAM
128/144-MBit (256K
×
16/18
×
32s)
Table 14
COL-to-ROW Packet Interaction - Rules
Case #
COPa
Da
Ba
Ca1
ROPb
Db
Bb
Rb
t
CRDELAY
Example
CR1
NOCOP
Da
Ba
Ca1
x…x
xxxxx
xxxx
x…x
0
CR2
RD/WR
Da
Ba
Ca1
x…x
/= Da
xxxx
x…x
0
CR3
RD/WR
Da
Ba
Ca1
x…x
== Da
/= {Ba, Ba+1, Ba-1}
x…x
0
CR4
RD/WR
Da
Ba
Ca1
ACT
== Da
== {Ba}
x…x
Illegal
CR5
RD/WR
Da
Ba
Ca1
ACT
== Da
== {Ba+1, Ba-1}
x…x
Illegal
CR6
RD
Da
Ba
Ca1
PRER
== Da
== {Ba, Ba+1, Ba-1}
x…x
t
RDP
Figure 15
CR7
retire
1)
Da
Ba
Ca1
PRER
== Da
== {Ba, Ba+1, Ba-1}
x…x
t
RTP
Figure 16
CR8
WR
2)
Da
Ba
Ca1
PRER
== Da
== {Ba, Ba+1, Ba-1}
x…x
0
Figure 19
CR9
xxxx
Da
Ba
Ca1
NOROP
xxxxx
xxxx
x…x
0
1)
This is any command which permits the write buffer of device Da to retire (see
Table 9
). “Ba” is the bank address in the write
buffer.
This situation is hazardous because the write buffer will be left unretired while the targeted bank is precharged. See
Figure 19
.
2)
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