
User’s Manual U16541EJ4V0UD
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CHAPTER 30 FLASH MEMORY
The following products are the flash memory versions of the V850ES/SG2.
Caution
There are differences in the amount of noise tolerance and noise radiation between flash
memory versions and mask ROM versions. When considering changing from a flash memory
version to a mask ROM version during the process from experimental manufacturing to mass
production, make sure to sufficiently evaluate commercial samples (CS) (not engineering
samples (ES)) of the mask ROM versions.
For the electrical specifications related to the flash memory rewriting, see CHAPTER 32
ELECTRICAL SPECIFICATIONS.
PD70F3261, 70F3261Y, 70F3271, 70F3271Y, 70F3281, 70F3281Y:
384 KB flash memory
PD70F3263, 70F3263Y, 70F3273, 70F3273Y, 70F3283, 70F3283Y:
640 KB flash memory
Flash memory versions are commonly used in the following development environments and mass production
applications.
For altering software after the V850ES/SG2 is soldered onto the target system.
For data adjustment when starting mass production.
For differentiating software according to the specification in small scale production of various models.
For facilitating inventory management.
For updating software after shipment.
The instruction fetch to the flash memory can be accessed in 4 bytes with 1 clock the same way as for mask ROM
versions.
The flash memory can be written to with it mounted on the target system (on-board). Connect the dedicated flash
programmer to the target system, then write.
30.1 Features
4-byte/1-clock access (when instruction is fetched)
Capacity: 640/384 KB
Write voltage: Erase/write with a single power supply
Rewriting method
 Rewriting by communication with dedicated flash programmer via serial interface (on-board/off-board
programming)
 Rewriting flash memory by user program (self programming)
Flash memory write prohibit function supported (security function)
Safe rewriting of entire flash memory area by self programming using boot swap function
Interrupts can be acknowledged during self programming.