參數(shù)資料
型號(hào)： NAND08GW3B2CZL1F
廠商： NUMONYX
元件分類(lèi)： PROM
英文描述： 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封裝： 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件頁(yè)數(shù)： 9/72頁(yè)
文件大小： 1919K
代理商： NAND08GW3B2CZL1F
NAND04G-B2D, NAND08G-BxC
Signal descriptions
3.7
Write enable (W)
The Write Enable input, W, controls writing to the command interface, input address and
data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 s (min) is required before the
command interface is ready to accept a command. It is recommended to keep Write Enable
High during the recovery time.
3.8
Write protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, VIL, the device does not accept any
program or erase operations.
It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.9
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that identifies if the P/E/R controller is
currently active.
When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the
operation completes, Ready/Busy goes High, VOH.
The use of an open-drain output allows the ready/busy pins from several memories to be
connected to a single pull-up resistor. A Low then indicates that one or more of the
memories is busy.
During power-up and power-down a minimum recovery time of 10 s is required before the
command interface is ready to accept a command. During this period the RB signal is Low,
VOL.
calculate the value of the pull-up resistor.
3.10
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever VDD is below VLKO (see
Table 29) to protect the device from any involuntary program/erase during power-transitions.
Each device in a system should have VDD decoupled with a 0.1 F capacitor. The PCB track
widths should be sufficient to carry the required program and erase currents.
3.11
VSS ground
Ground, VSS, is the reference for the power supply. It must be connected to the system
ground.
相關(guān)PDF資料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*