參數(shù)資料
型號(hào)： NAND08GW3B2CZL1F
廠商： NUMONYX
元件分類： PROM
英文描述： 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封裝： 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件頁(yè)數(shù)： 36/72頁(yè)
文件大?。?/td> 1919K
代理商： NAND08GW3B2CZL1F
NAND04G-B2D, NAND08G-BxC
Device operations
6.15
Read ONFI signature
To recognize NAND flash devices that are compatible with the ONFI 1.0 command set, the
Read Electronic Signature can be issued, followed by an address of 20h. The next four
bytes output is the ONFI signature, which is the ASCII encoding of the ‘ONFI’ word. Reading
beyond four bytes produces indeterminate values. The device remains in this state until a
new command is issued.
Figure 33 provides a description of the read ONFI signature waveform and Table 20
provides the definition of the output bytes.
6.16
Read parameter page
The Read Parameter Page command retrieves the data structure that describes the NAND
flash organization, features, timings and other behavioral parameters. This data structure
enables the host processor to automatically recognize the NAND flash configuration of a
device. The whole data structure is repeated at least five times.
See Figure 40 for a description of the read parameter page waveform.
The Random Data Read command can be issued during execution of the read parameter
page to read specific portions of the parameter page.
The Read Status command may be used to check the status of read parameter page during
execution. After completion of the Read Status command, 00h is issued by the host on the
command line to continue with the data output flow for the Read Parameter Page command.
Read status enhanced is not be used during execution of the Read Parameter Page
command.
Table 21 defines the parameter page data structure; for parameters that span multiple bytes,
the least significant byte of the parameter corresponds to the first byte.
Values are reported in the parameter page in bytes when referring to items related to the
size of data access (as in an x8 data access device). For example, the chip returns how
many data bytes are in a page. For a device that supports x16 data access, the host is
required to convert byte values to word values for its use. Unused fields are set to 0h.
For more detailed information about parameter page data bits, refer to ONFI
specification 1.0, section 5.4.1.
Table 20.
Read ONFI signature
Byte
Value
ASCII character
1st byte
4Fh
O
2nd byte
4Eh
N
3rd byte
46h
F
4th byte
49h
I
5th byte
Undefined
相關(guān)PDF資料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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