參數(shù)資料
型號: NAND08GW3B2CZL1F
廠商: NUMONYX
元件分類: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封裝: 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件頁數(shù): 17/72頁
文件大小: 1919K
代理商: NAND08GW3B2CZL1F
Device operations
NAND04G-B2D, NAND08G-BxC
Figure 8.
Random data output during sequential data output
6.2
Cache read
The cache read operation improves the read throughput by reading data using the cache
register. As soon as the user starts to read one page, the device automatically loads the
next page into the cache register.
A Read Page command, as defined in Section 6.1.1: Random read, is issued prior to the
first Read Cache command in a read cache sequence. Once the Read Page command
execution is terminated, the Cache Read command can be issued as follows:
1.
Issue a Sequential Cache Read command to copy the next page in sequential order to
the cache register
2.
Issue a Random Cache Read command to copy the page addressed in this command
to the cache register.
The two commands can be used interchangeably, in any order. When there are no more
pages are to be read, the final page is copied into the cache register by issuing the Exit
Cache Read command. A Read Cache command must not be issued after the last page of
the device is read. Data output only starts after issuing the 31h command for the first time.
operation for examples of the two sequences.
I/O
RB
Address
Inputs
ai08658b
Data Output
Busy
tBLBH1
(Read Busy time)
00h
Cmd
Code
30h
Address
Inputs
Data Output
05h
E0h
5 Add cycles
Main Area
Spare
Area
Col Add 1,2
Row Add 1,2,3
Cmd
Code
Cmd
Code
Cmd
Code
2 Add cycles
Main Area
Spare
Area
Col Add 1,2
R
W
tRHWL
相關PDF資料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相關代理商/技術參數(shù)
參數(shù)描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel