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參數(shù)資料
| 型號(hào)： | NAND08GW3B2CZL1F |
| 廠商： | NUMONYX |
| 元件分類(lèi)： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封裝： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件頁(yè)數(shù)： | 18/72頁(yè) |
| 文件大?。?/td> | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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NAND04G-B2D, NAND08G-BxC
Device operations
After the Sequential Cache Read or Random Cache Read command has been issued, the
Ready/Busy signal goes Low and the status register bits are set to SR5 =' 0' and SR6 ='0'
for a period of cache read busy time, tRCBSY, while the device copies the next page into the
cache register.
After the cache read busy time has passed, the Ready/Busy signal goes High and the status
register bits are set to SR5 = '0' and SR6 = '1', signifying that the cache register is ready to
download new data. Data of the previously read page can be output from the page buffer by
toggling the Read Enable signal. Data output always begins at column address 00h, but the
Random Data Output command is also supported.
Figure 9.
Cache read (sequential) operation
Figure 10.
Cache read (random) operation
I/O0-7
RB
Address
Inputs
ai13176b
00h
30h
tBLBH1
(Read Busy time)
R
tRCBSY
31h
3Fh
Data
Outputs
Data
Outputs
(Read Cache Busy time)
Read
Setup
Code
Read
Code
Repeat as many times as ncessary.
Cache
Read
Sequential
Code
Exit
Cache
Read
Code
Busy
I/O0-7
RB
Address
Inputs
ai13176c
00h
30h
tBLBH1
(Read Busy time)
R
tRCBSY
00h
Data
Outputs
(Read Cache Busy time)
Read
Setup
Code
Read
Code
Repeat as many times as ncessary.
Read
Setup
Code
Exit
Cache
Read
Code
Busy
31h
Enhanced
Cache
Read
(random)
Code
3Fh
Data
Outputs
Address
Inputs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128R4A2BZA6E | 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND256R4A0DN6T | 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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