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參數(shù)資料
| 型號： | NAND08GW3B2CZL1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封裝： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件頁數(shù)： | 43/72頁 |
| 文件大?。?/td> | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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Software algorithms
NAND04G-B2D, NAND08G-BxC
9.3
Garbage collection
When a data page needs to be modified, it is faster to write to the first available page,
resulting in the previous page being marked as invalid. After several updates it is necessary
to remove invalid pages to free memory space.
To free this memory space and allow further program operations, the implementation of a
garbage collection algorithm is recommended. In garbage collection software, the valid
pages are copied into a free area and the block containing the invalid pages is erased as
show in Figure 22.
Figure 22.
Garbage collection
9.4
Wear-leveling algorithm
For write-intensive applications, the implementation of a wear-leveling algorithm is
recommended to monitor and spread the number of write cycles per block.
In memories that do not use a wear-leveling algorithm, not all blocks get used at the same
rate. The wear-leveling algorithm ensures that equal use is made of all the available write
cycles for each block. There are two wear-leveling levels:
●
First level wear-leveling, where new data is programmed to the free blocks that have
had the fewest write cycles
●
Second level wear-leveling, where long-lived data is copied to another block so that the
original block can be used for more frequently-changed data.
The second level wear-leveling is triggered when the difference between the maximum and
the minimum number of write cycles per block reaches a specific threshold.
Valid
page
Invalid
page
Free
page
(erased)
Old area
AI07599B
New area (After GC)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128R4A2BZA6E | 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND256R4A0DN6T | 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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