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參數(shù)資料
| 型號： | NAND08GW3B2CZL1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封裝： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件頁數(shù)： | 25/72頁 |
| 文件大?。?/td> | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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NAND04G-B2D, NAND08G-BxC
Device operations
Figure 15.
Copy back program (with readout of data)
Figure 16.
Page copy back program with random data input
6.6
Multiplane copy back program
In addition to multiplane page program, the NAND04G-B2D and NAND08G-BxC devices
support multiplane copy back program.
A Multiplane Copy Back Program command requires exactly the same steps as a Multiplane
Page Program command, and must satisfy the same time constraints (see Section 6.4:
Prior to executing the multiplane copy back program operation, two single-page read
operations must be executed to copy back the first page from the first plane and the second
page from the second plane.
Two different sequences are allowed for the multiplane copy back operation:
1.
A traditional one (85h command, address insertion for the first plane, 11h command,
81h command, address insertion for the second plane, 10h command)
2.
ONFI 1.0 (85h command, address insertion for the first plane, 11h command, 85h
command, address insertion for the second plane, 10h command)
The EDC check is also performed during the multiplane copy back program. Errors during
multiplane copy back operations can be detected by performing a read EDC status register
operation (see Section 6.13: Read EDC status register).
If the multiplane copy back program fails, an error is signaled on bit SR0 of the status
register. To know which page of the two planes failed, the Read Status Enhanced command
must be executed twice, once for each plane (see Section 6.12). Figure 17: Multiplane copy
back program provides a description of multiplane copy back program waveforms.
I/O
RB
Source
Add Inputs
ai09858c
85h
Copy Back
Code
Read
Code
Read Status
Register
Target
Add Inputs
tBLBH1
(Read Busy time)
Busy
tBLBH2
(Program Busy time)
00h
10h
70h
SR0
Busy
35h
Data Outputs
I/O
RB
Source
Add Inputs
ai11001
85h
Read
Code
Target
Add Inputs
tBLBH1
(Read Busy time)
00h
Busy
35h
85h
Data
2 Cycle
Add Inputs
Data
Copy Back
Code
10h
70h
Unlimited number of repetitions
Busy
tBLBH2
(Program Busy time)
SR0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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