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參數(shù)資料
| 型號： | NAND08GW3B2CZL1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封裝： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件頁數(shù)： | 67/72頁 |
| 文件大?。?/td> | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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NAND04G-B2D, NAND08G-BxC
Description
1
Description
The NAND04G-B2D and NAND08G-BxC are part of the NAND flash 2112-byte/1056-word
page family of non-volatile flash memories. They use NAND cell technology have a density
of 4 Gbits and 8 Gbits, respectively.
The NAND04G-B2D memory array is split into 2 planes of 2048 blocks each. This
multiplane architecture makes it possible to program 2 pages at a time (one in each plane),
or to erase 2 blocks at a time (one in each plane). This feature reduces the average program
and erase times by 50%.
The NAND08G-BxC is a stacked device that combines two NAND04G-B2D dice, both of
which feature a multiplane architecture.
In the NAND08G-B2C devices, only one of the memory components can be enabled at a
time, therefore, operations can only be performed on one of the memory components at any
one time.
In the NAND08G-B4C devices, each NAND04G-B2D die can be accessed independently
using two sets of signals.
The devices operate from a 1.8 V or 3 V voltage supply. Depending on whether the device
has a x8 or x16 bus width, the page size is 2112 bytes (2048 + 64 spare) or 1056 words
(1024 + 32 spare), respectively.
The address lines are multiplexed with the data input/output signals on a multiplexed x8
input/output bus. This interface reduces the pin count and makes it possible to migrate to
other densities without changing the footprint.
Each block can be programmed and erased over 100,000 cycles with ECC (error correction
code) on. To extend the lifetime of NAND flash devices, the implementation of an ECC is
mandatory.
A write protect pin is available to provide hardware protection against program and erase
operations.
The devices feature an open-drain ready/busy output that identifies if the P/E/R
(program/erase/read) controller is currently active. The use of an open-drain output allows
the ready/busy pins from several memories to connect to a single pull-up resistor.
A Copy Back Program command is available to optimize the management of defective
blocks. When a page program operation fails, the data can be programmed in another page
without having to resend the data to be programmed. An embedded error detection code is
automatically executed after each copy back operation: 1 error bit can be detected for every
528 bits. With this feature it is no longer necessary to use an external 2-bit ECC to detect
copy back operation errors.
The devices have a cache read feature that improves the read throughput for large files.
During cache reading, the device loads the data in a cache register while the previous data
is transferred to the I/O buffers to be read.
The devices have the chip enable ‘don’t care’ feature, which allows code to be directly
downloaded by a microcontroller. This is possible because chip enable transitions during the
latency time do not stop the read operation.
Both the NAND04G-B2D and NAND08G-BxC support the ONFI 1.0 specification.
相關(guān)PDF資料 |
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| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128R4A2BZA6E | 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND256R4A0DN6T | 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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