- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189003 > NAND08GW3B2CZL1F (NUMONYX) 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 PDF資料下載
參數(shù)資料
| 型號： | NAND08GW3B2CZL1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封裝： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件頁數(shù)： | 6/72頁 |
| 文件大?。?/td> | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
第1頁第2頁第3頁第4頁第5頁當(dāng)前第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
Memory array organization
NAND04G-B2D, NAND08G-BxC
2
Memory array organization
The memory array of the devices is made up of NAND structures where 32 cells are
connected in series. It is organized into blocks where each block contains 64 pages. The
array is split into two areas, the main area, and the spare area. The main area of the array is
used to store data, and the spare area typically stores error correction codes, software flags,
or bad block identification.
In x8 devices, the pages are split into a 2048-byte main area and a spare area of 64 bytes.
In x16 devices, the pages are split into a 1024-word main area and a spare area of
32 words. Refer to Figure 6: Memory array organization.
Bad blocks
In x8 devices, the NAND flash 2112-byte/1056-word page devices may contain bad blocks,
which are blocks that contain one or more invalid bits whose reliability is not guaranteed.
Additional bad blocks may develop during the lifetime of the device.
The bad block information is written prior to shipping (refer to Section 9.1: Bad block
management for more details).
Table 4 shows the minimum number of valid blocks. The values shown include both the bad
blocks that are present when the device is shipped and the bad blocks that could develop
later on.
These blocks need to be managed using bad blocks management, block replacement, or
error correction codes (refer to Section 9: Software algorithms).
Table 4.
Valid blocks
Density of device
Min
Max
4 Gbits
4016
4096
8Gbits(1)
1.
The NAND08G-BxC devices are composed of two 4-Gbit dice. The minimum number of valid blocks is
4016 for each die.
8032
8192
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128R4A2BZA6E | 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND256R4A0DN6T | 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。