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參數(shù)資料
| 型號(hào)： | NAND08GW3B2CZL1F |
| 廠商： | NUMONYX |
| 元件分類(lèi)： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封裝： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件頁(yè)數(shù)： | 1/72頁(yè) |
| 文件大小： | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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May 2008
Rev 5
1/72
1
NAND04G-B2D, NAND08G-BxC
4-Gbit, 8-Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND flash memories
Features
■
High density NAND flash memory
– Up to 8 Gbits of memory array
– Cost-effective solution for mass storage
applications
■
NAND interface
– x8 or x16 bus width
– Multiplexed address/data
■
Supply voltage: 1.8 V or 3.0 V device
■
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
■
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
■
Page read/program
– Random access: 25 s (max)
– Sequential access: 25 ns (min)
– Page program time: 200 s (typ)
– Multiplane page program time (2 pages):
200 s (typ)
■
Copy back program with automatic error
detection code (EDC)
■
Cache read mode
■
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
■
Status register
■
Electronic signature
■
Chip enable ‘don’t care’
■
Serial number option
r
■
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
■
ONFI 1.0 compliant command set
■
Data integrity
– 100, 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
■
ECOPACK packages
Table 1.
Device summary
Reference
Part number
NAND04G-B2D
NAND04GR3B2D
NAND04GW3B2D
NAND04GR4B2D(1)
NAND04GW4B2D(1)
1.
x16 organization only available for MCP products.
NAND08G-BxC
NAND08GR3B2C,
NAND08GW3B2C
NAND08GR4B2C(1)
NAND08GW4B2C(1)
NAND08GR3B4C
NAND08GW3B4C
LGA
TSOP48 12 x 20 mm (N)
LGA52 12 x 17 mm (ZL)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128R4A2BZA6E | 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND256R4A0DN6T | 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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