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參數(shù)資料
| 型號(hào)： | NAND08GW3B2CZL1F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封裝： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件頁數(shù)： | 24/72頁 |
| 文件大?。?/td> | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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Device operations
NAND04G-B2D, NAND08G-BxC
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
The NAND04G-B2D and NAND08G-BxC devices feature automatic EDC (error detection
code) during a copy back operation. Consequently, external ECC is no longer required. The
errors detected during copy back operations can be read by performing a read EDC status
register operation (see Section 6.13: Read EDC status register). See also Section 6.9 for
details of EDC operations.
The copy back program operation requires the following four steps:
1.
The first step reads the source page. The operation copies all 2112 bytes from the
page into the data buffer. It requires:
–
1 bus write cycle to set up the command
–
5 bus write cycles to input the source page address
–
1 bus write cycle to issue the confirm command code
2.
When the device returns to the ready state (ready/busy High), optional data readout is
allowed by pulsing R; the next bus write cycle of the command is given with the 5 bus
cycles to input the target page address. See Table 11 for the addresses that must be
the same for the source and target page.
3.
Issue the confirm command to start the P/E/R controller.
To see the data input cycle for modifying the source page and an example of the copy back
program operation, refer to Figure 14: Copy back program (without readout of data).
Figure 16: Page copy back program with random data input shows a data input cycle to
modify a portion or a multiple distant portion of the source page.
Figure 14.
Copy back program (without readout of data)
1.
Copy back program is only permitted between odd address pages or even address pages.
Table 11.
Copy back program addresses
Density
Source and target page addresses
4 Gbits
Same A18
8 Gbits
Same A18 and A30
I/O
RB
Source
Add Inputs
ai09858b
85h
Copy Back
Code
Read
Code
Read Status Register
Target
Add Inputs
tBLBH1
(Read Busy time)
Busy
tBLBH2
(Program Busy time)
00h
10h
70h
SR0
Busy
35h
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| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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