參數(shù)資料
型號(hào)： NAND08GW3B2CZL1F
廠商： NUMONYX
元件分類： PROM
英文描述： 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封裝： 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件頁數(shù)： 51/72頁
文件大?。?/td> 1919K
代理商： NAND08GW3B2CZL1F
NAND04G-B2D, NAND08G-BxC
DC and AC parameters
Table 31.
AC characteristics for operations(1)
Symbol
Alt.
Parameter
1.8 V
3V
Unit
tALLRL1
tAR
Address Latch Low to Read
Enable Low
Read electronic signature
Min
10
ns
tALLRL2
Read cycle
Min
10
ns
tBHRL
tRR
Ready/Busy High to Read Enable Low
Min
20
ns
tBLBH1
Ready/Busy Low to
Ready/Busy High
Read Busy time
Max
25
s
tBLBH2
tPROG
Program Busy time
Max
700
s
tBLBH3
tBERS
Erase Busy time
Max
2
ms
tBLBH4
tRST
Reset Busy time, during ready
Max
5
s
Reset Busy time, during read
Max
5
s
Reset Busy time, during program
Max
10
s
Reset Busy time, during erase
Max
500
s
tCLLRL
tCLR
Command Latch Low to Read Enable Low
Min
10
ns
tDZRL
tIR
Data Hi-Z to Read Enable Low
Min
0
ns
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
30
ns
tEHALX
tCSD
Chip Enable High to Address Latch ‘don’t care’
Min
10
ns
tEHCLX
Chip Enable High to Command Latch ‘don’t care’
tRHQZ
tRHZ
Read Enable High to Output Hi-Z
Max
100
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
45
25
ns
tRHRL
tREH
Read Enable High to Read
Enable Low
Read Enable High Hold time
Min
15
10
ns
tEHQX
tCOH Chip Enable high to Output Hold
Min
15
ns
tRHQX
tRHOH Read Enable High to Output Hold
Min
15
ns
tRLQX
tRLOH Read Enable Low to Output Hold (EDO mode)
Min
5
ns
tRLRH
tRP
Read Enable Low to Read
Enable High
Read Enable pulse width
Min
25
12
ns
tRLRL
tRC
Read Enable Low to Read
Enable Low
Read cycle time
Min
45
25
ns
tRLQV
tREA
Read Enable Low to Output
Valid
Read Enable access time
Max
30
20
ns
Read ES access time(2)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read Busy time
Max
25
s
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
ns
tWHRL
tWHR Write Enable High to Read Enable Low
Min
60
ns
tRHWL
tRHW Read Enable High to Write Enable Low
Min
100
ns
tWHWH
tADL
(3) Last address latched to data loading time during program operations Min
100
70
ns
tVHWH
tVLWH
tWW
(4)
Write protection time
Min
100
ns
1.
The time to ready depends on the value of the pull-up resistor tied to the ready/busy pin. See Figure 41, Figure 42 and
2.
ES = electronic signature.
3.
tADL is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
4.
During a program/erase enable operation, tWW is the delay from WP high to W High.
During a program/erase disable operation, tWW is the delay from WP Low to W High.
相關(guān)PDF資料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*