參數(shù)資料
型號(hào)： NAND08GW3B2CZL1F
廠商： NUMONYX
元件分類： PROM
英文描述： 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封裝： 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件頁數(shù)： 26/72頁
文件大?。?/td> 1919K
代理商： NAND08GW3B2CZL1F
Device operations
NAND04G-B2D, NAND08G-BxC
Figure 17.
Multiplane copy back program
1.
This address scheme refers to x8 devices. Please, remember to use the appropriate scheme for x16 devices.
2.
Any command between 11h and 81h is prohibited except 70h and FFh.
6.7
Block erase
Erase operations are done one block at a time. An erase operation sets all of the bits in the
addressed block to ‘1’. All previous data in the block is lost.
I/O
RB
Add. 5
cycles
ai13172c
00h
Read
code
Read
code
tBLBH1
(Read Busy time)
Busy
tBLBH1
(Read Busy time)
00h
Busy
35h
Read Status Register
10h
70h
SR0
Col. Add. 1, 2
Row Add. 1, 2, 3
Source address on 1st plane
35h
85h
Copy back
code
11h
81h
Copy back
code
tIPBSY
Busy
tBLBH2
(Program Busy time)
Busy
Col. Add. 1, 2
Row Add. 1, 2, 3
Source address on 2nd plane
Col. Add. 1, 2
Row Add. 1, 2, 3
Destination address
Col. Add. 1, 2
Row Add. 1, 2, 3
Destination address
A0-A11 = set to 'Low'
Add. 5
cycles
Add. 5
cycles
A12-A17 = set to 'Low'
A18 = set to 'Low'
A19-A28 = set to 'Low'
Add. 5
cycles
A0-A11 = set to 'Low'
A12-A17 = Valid
A18 = set to 'High'
A19-A28 = Valid
Source page
Target page
First plane
Main area
Spare area
Source page
Target page
Second plane
Main area
Spare area
(1)
(3)
(2)
(1): Read for copy back on first plane
(2): Read for copy back on second plane
(3): Two-plane copy back program
2
a) Traditional sequence.
W
CL
AL
R
60h R1A R2A R3A D1h
60h R1B R2B R3B
I/O 0-7
RB
Busy
tIPBSY
Busy
tBLBH2
(Program Busy time)
b) ONFI 1.0 sequence.
D0h
相關(guān)PDF資料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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