參數(shù)資料
型號(hào): NAND08GW3B2CZL1F
廠商: NUMONYX
元件分類: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封裝: 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件頁數(shù): 31/72頁
文件大?。?/td> 1919K
代理商: NAND08GW3B2CZL1F
NAND04G-B2D, NAND08G-BxC
Device operations
6.11.2
P/E/R controller and cache ready/busy bit (SR6)
Status register bit SR6 has two different functions depending on the current operation.
During cache operations, SR6 acts as a cache ready/busy bit, which indicates whether the
cache register is ready to accept new data. When SR6 is set to '0', the cache register is
busy, and when SR6 is set to '1', the cache register is ready to accept new data.
During all other operations, SR6 acts as a P/E/R controller bit, which indicates whether the
P/E/R controller is active or inactive. When the P/E/R controller bit is set to ‘0’, the P/E/R
controller is active (device is busy); when the bit is set to ‘1’, the P/E/R controller is inactive
(device is ready).
6.11.3
P/E/R controller bit (SR5)
The Program/Erase/Read controller bit indicates whether the P/E/R controller is active or
inactive during cache operations. When the P/E/R controller bit is set to ‘0’, the P/E/R
controller is active (device is busy); when the bit is set to ‘1’, the P/E/R controller is inactive
(device is ready).
Note:
This bit is only valid for cache operations.
6.11.4
Error bit (SR0)
The error bit identifies if any errors have been detected by the P/E/R controller. The error bit
is set to ’1’ when a program or erase operation has failed to write the correct data to the
memory. If the error bit is set to ‘0’ the operation has completed successfully.
6.11.5
SR4, SR3, SR2 and SR1 are reserved
Table 14.
Status register bits
Bit
Name
Logic level
Definition
SR7
Write protection
'1'
Not protected
'0'
Protected
SR6
Program/Erase/Read controller
'1'
P/E/R controller inactive, device ready
'0'
P/E/R controller active, device busy
SR5
Program/Erase/Read controller(1)
'1'
P/E/R controller inactive, device ready
'0'
P/E/R controller active, device busy
SR4, SR3, SR2,
SR1
Reserved
‘don’t care’
SR0
Generic error
‘1’
Error – operation failed
‘0’
No error – operation successful
1.
Only valid for cache operations.
相關(guān)PDF資料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel