參數(shù)資料
型號(hào)： HYB18T512800AC-5
廠商： INFINEON TECHNOLOGIES AG
英文描述： M39012 MIL RF CONNECTOR
中文描述： 512兆雙數(shù)據(jù)速率2內(nèi)存
文件頁(yè)數(shù)： 77/96頁(yè)
文件大小： 2153K
代理商： HYB18T512800AC-5
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
I
DD
Specifications and Conditions
Data Sheet
77
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
6
I
DD
Specifications and Conditions
Table 36
Parameter
I
DD
Measurement Conditions
Symbol Notes
1)2)3)4)5)6)
Operating Current 0
One bank Active - Precharge;
t
CK
=
t
CKmin.
,
t
RC
=
t
RCmin
.,
t
RAS
=
t
RASmin.
, CKE is HIGH, CS is
high between valid commands. Address and control inputs are SWITCHING, Databus inputs
are SWITCHING
.
Operating Current 1
One bank Active - Read - Precharge;
I
OUT
= 0 mA, BL = 4,
t
CK
=
t
CKmin.
,
t
RC
=
t
RCmin
.,
t
RAS
=
t
RASmin.
,
t
RCD
=
t
RCDmin.
,AL = 0, CL = CL
min
.; CKE is HIGH, CS is high between valid commands.
Address and control inputs are SWITCHING, Databus inputs are SWITCHING.
Precharge Power-Down Current
All banks idle; CKE is LOW;
t
CK
=
t
CKmin
;
Other control and address inputs are STABLE, Data
bus inputs are FLOATING
.
Precharge Standby Current
All banks idle; CS is HIGH; CKE is HIGH;
t
CK
=
t
CKmin.
; Other control and address inputs are
SWITCHING, Data bus inputs are SWITCHING.
Precharge Quiet Standby Current
All banks idle; CS is HIGH; CKE is HIGH;
t
CK
=
t
CKmin.
; Other control and address inputs are
STABLE, Data bus inputs are FLOATING.
Active Power-Down Current
All banks open;
t
CK
=
t
CKmin.
, CKE is LOW; Other control and address inputs are STABLE, Data
bus inputs are FLOATING. MRS A12 bit is set to “0” (Fast Power-down Exit);
Active Power-Down Current
All banks open;
t
CK
=
t
CKmin.
, CKE is LOW; Other control and address inputs are STABLE, Data
bus inputs are FLOATING. MRS A12 bit is set to “1” (Slow Power-down Exit);
Active Standby Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL
min.
;
t
CK
=
t
CKmin
.;
t
RAS
=
t
RASmax.
,
t
RP
=
t
RPmin.
; CKE is HIGH, CS is high between valid commands. Address inputs
are SWITCHING; Data Bus inputs are SWITCHING;
I
OUT
= 0 mA.
Operating Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL
min.
;
t
CK
=
t
CKmin.
;
t
RAS
=
t
RASmax.
,
t
RP
=
t
RPmin.
; CKE is HIGH, CS is high between valid commands. Address inputs
are SWITCHING; Data Bus inputs are SWITCHING;
I
OUT
= 0 mA.
Operating Current
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL
min.
;
t
CK
=
t
CKmin.
;
t
RAS
=
t
RASmax.
,
t
RP
=
t
RPmin.
; CKE is HIGH, CS is high between valid commands. Address inputs
are SWITCHING; Data Bus inputs are SWITCHING;
Burst Refresh Current
t
CK
=
t
CKmin
., Refresh command every
t
RFC
=
t
RFCmin.
interval, CKE is HIGH, CS is HIGH
between valid commands, Other control and address inputs are SWITCHING, Data bus
inputs are SWITCHING.
Distributed Refresh Current
t
CK
=
t
CKmin.
, Refresh command every
t
RFC
=
t
REFI
interval, CKE is LOW and CS is HIGH
between valid commands, Other control and address inputs are SWITCHING, Data bus
inputs are SWITCHING.
I
DD0
I
DD1
I
DD2P
I
DD2N
I
DD2Q
I
DD3P(0)
I
DD3P(1)
I
DD3N
I
DD4R
I
DD4W
I
DD5B
I
DD5D
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PDF描述
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HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁(yè)面:1445 (CN2011-ZH PDF)
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