參數(shù)資料
型號(hào)： HYB18T512800AC-5
廠商： INFINEON TECHNOLOGIES AG
英文描述： M39012 MIL RF CONNECTOR
中文描述： 512兆雙數(shù)據(jù)速率2內(nèi)存
文件頁(yè)數(shù)： 29/96頁(yè)
文件大?。?/td> 2153K
代理商： HYB18T512800AC-5
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
Data Sheet
29
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P
Extended Mode Register Set for OCD impedance adjustment
OCD impedance adjustment can be done using the
following EMRS(1) mode. In drive mode all outputs are
driven out by DDR2 SDRAM and drive of RDQS is
dependent on EMRS(1) bit enabling RDQS operation.
In Drive(1) mode, all DQ, DQS (and RDQS) signals are
driven high and all DQS (and RDQS) signals are driven
low. In Drive(0) mode, all DQ, DQS (and RDQS) signals
are driven low and all DQS (and RDQS) signals are
driven high. In adjust mode, BL = 4 of operation code
data must be used. In case of OCD calibration default,
output driver characteristics have a nominal impedance
value of 18 Ohms during nominal temperature and
voltage conditions. Output driver characteristics for
OCD calibration default are specified in
Table 10
. OCD
applies only to normal full strength output drive setting
defined by EMRS(1) and if half strength is set, OCD
default output driver characteristics are not applicable.
When OCD calibration adjust mode is used, OCD
default output driver characteristics are not applicable.
After OCD calibration is completed or driver strength is
set to default, subsequent EMRS(1) commands not
intended to adjust OCD characteristics must specify
A[9:7] as ’000’ in order to maintain the default or
calibrated value.
OCD impedance adjust
To adjust output driver impedance, controllers must
issue the ADJUST EMRS(1) command along with a 4
bit burst code to DDR2 SDRAM as in
Table 10
. For this
operation, Burst Length has to be set to BL = 4 via MRS
command before activating OCD and controllers must
drive the burst code to all DQs at the same time. DT0 in
Table 10
means all DQ bits at bit time 0, DT1 at bit time
1, and so forth. The driver output impedance is
adjusted for all DDR2 SDRAM DQs simultaneously and
after OCD calibration, all DQs of a given DDR2 SDRAM
will be adjusted to the same driver strength setting. The
maximum step count for adjustment is 16 and when the
limit is reached, further increment or decrement code
has no effect. The default setting may be any step
within the maximum step count range. When Adjust
mode command is issued, AL from previously set value
must be applied.
Table 9
A9
0
0
0
1
1
Output driver characteristics for OCD calibration
A8
A7
Operation
0
0
OCD calibration mode exit
0
1
Drive(1) DQ, DQS, (RDQS) high and DQS (RDQS) low
1
0
Drive(0) DQ, DQS, (RDQS) low and DQS (RDQS) high
0
0
Adjust mode
1
1
OCD calibration default
Table 10
4 bit burst code inputs to all DQs
D
T0
D
T1
0
0
0
0
0
0
0
1
1
0
0
1
0
1
1
0
1
0
Other Combinations
Off- Chip-Driver Adjust Program
Operation
Pull-up driver strength
NOP (no operation)
Increase by 1 step
Decrease by 1 step
NOP
NOP
Increase by 1 step
Decrease by 1 step
Increase by 1 step
Decrease by 1 step
D
T2
0
0
1
0
0
0
1
0
1
D
T3
0
1
0
0
0
1
0
1
0
Pull-down driver strength
NOP (no operation)
NOP
NOP
Increase by 1 step
Decrease by 1 step
Increase by 1 step
Increase by 1 step
Decrease by 1 step
Decrease by 1 step
Reserved
相關(guān)PDF資料
PDF描述
HYB18T512800AC DDR2 Registered Memory Modules
HYB18T512800AF DDR2 Registered Memory Modules
HYB18T512800AF-37 512-Mbit Double-Data-Rate-Two SDRAM
HYB18T512800AF-5 512-Mbit Double-Data-Rate-Two SDRAM
HYB25D128160CE-5 128 Mbit Double Data Rate SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁(yè)面:1445 (CN2011-ZH PDF)
HYB18T512800BF-3S 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
HYB25D128160AT-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
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