| 型號 | 廠商 | 描述 |
| kmm5324004bswg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| kmm5324004cswg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| kmm5324004ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5324004csw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| kmm5324004ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5324100ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5324100ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5324104ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5324104ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5328000ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5328100ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5328000bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| kmm5328100ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | IND 4922-31L API DELEVAN T/R 1 |
| kmm5328000ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| kmm5328004bswg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| kmm5328004cswg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| kmm5328004csw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| kmm5361203c2w 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 36 DRAM SIMM(1M x 36 動態(tài) RAM模塊) |
| kmm53616000bk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53616000ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53616000bkg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53616000ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53616004bk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53616004ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53616004bkg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53616004ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm5362203c2w 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| kmm5362203c2wg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| kmm5362205c2w 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| kmm5362205c2wg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| kmm5364005bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM(4M x 36 動態(tài) RAM模塊) |
| kmm5364103ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
| kmm5364003ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
| kmm5364003bswg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| kmm5364003cswg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| kmm5364003bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| kmm5364103ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
| kmm5364003ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
| kmm5364003csw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| kmm5368003bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| kmm5368003bswg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
| kmm5368005bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 36 DRAM SIMM(8M x 36 動態(tài) RAM模塊) |
| kmm594000a 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS SIMM Memory Module |
| kmm594000a-10 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS SIMM Memory Module |
| kmm594000a-7 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS SIMM Memory Module |
| kmm594000a-8 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS SIMM Memory Module |
| kmm594000b 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS DRAM SIMM Memory Module |
| kmm594000b-6 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS DRAM SIMM Memory Module |
| kmm594000b-7 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS DRAM SIMM Memory Module |
| kmm594000b-8 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 9 CMOS DRAM SIMM Memory Module |