參數(shù)資料
型號(hào)： KMM53616004CK
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
中文描述： 1,600 × 36的DRAM上海藥物研究所利用16Mx4
文件頁(yè)數(shù)： 3/19頁(yè)
文件大?。?/td> 415K
代理商： KMM53616004CK
DRAM MODULE
KMM53616004BK/BKG
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
* NOTE
:
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
12
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V at pulse width
≤
20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width
≤
20ns, whcih is measured at V
SS
.
Item
Symbol
Min
4.5
0
2.4
-1.0
*2
Typ
Max
5.5
0
V
CC
*1
0.8
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
5.0
0
-
-
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I(
IL)
I(
OL)
V
OH
V
OL
Symbol
Speed
KMM53616004BK/BKG
Unit
Min
Max
1320
1200
24
1320
1200
1200
1080
12
1320
1200
10
5
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-10
-5
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Hyper Page Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
相關(guān)PDF資料
PDF描述
KMM53616004BKG 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM53616004CKG 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM5362203C2W 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
KMM5362203C2WG 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
KMM5362205C2W 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM53616004CKG 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
KMM5362203C2W 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
KMM5362203C2WG 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
KMM5362205C2W 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
KMM5362205C2WG 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
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