| 型號: | KMM53616004CKG |
| 廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述: | 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| 中文描述: | 1,600 × 36的DRAM上海藥物研究所利用16Mx4 |
| 文件頁數(shù): | 8/19頁 |
| 文件大小: | 415K |
| 代理商: | KMM53616004CKG |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM5362203C2W | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| KMM5362203C2WG | 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| KMM5362205C2W | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM5362205C2WG | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM5364005BSW | 4M x 36 DRAM SIMM(4M x 36 動(dòng)態(tài) RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM5362203C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| KMM5362203C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
| KMM5362205C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM5362205C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM53632000BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |