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參數(shù)資料
| 型號(hào)： | KMM5362205C2WG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| 中文描述： | 200萬× 36的DRAM上海藥物研究所和4M使用1Mx16四中科院江戶，一千刷新 |
| 文件頁數(shù)： | 17/17頁 |
| 文件大小： | 296K |
| 代理商： | KMM5362205C2WG |
DRAM MODULE
KMM5362205C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 17 -
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
.125(3.17)
MIN
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
Gold & Solder Plating Lead
.010(.25)MAX
.050(1.27)
.041
±
.004(1.04
±
.10)
.100(2.54)
MIN
.350(8.89)
MAX
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
NOTE : The used device are 1Mx16 EDO DRAM and 1Mx4 Quad CAS with EDO DRAM.
DRAM Part No. : KMM5362205C2W/C2WG -- KM416C1204CJ (400 mil)
.750(19.05)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
-- KM44C1005DJ (300 mil)
Revision History
Rev 0.0 : Nov. 1997
.225(5.71)
MIN
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KMM53632000BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632000BKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632000CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632000CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| KMM53632004BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V |
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