| 型號(hào): | KMM5362205C2WG | 
| 廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. | 
| 英文描述: | 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh | 
| 中文描述: | 200萬× 36的DRAM上海藥物研究所和4M使用1Mx16四中科院江戶,一千刷新 | 
| 文件頁數(shù): | 16/17頁 | 
| 文件大?。?/td> | 296K | 
| 代理商: | KMM5362205C2WG | 

| 相關(guān)PDF資料 | PDF描述 | 
|---|---|
| KMM5364005BSW | 4M x 36 DRAM SIMM(4M x 36 動(dòng)態(tài) RAM模塊) | 
| KMM5364103CKG | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V | 
| KMM5364003CKG | 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V | 
| KMM5364003BSWG | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V | 
| KMM5364003CSWG | 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V | 
| 相關(guān)代理商/技術(shù)參數(shù) | 參數(shù)描述 | 
|---|---|
| KMM53632000BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | 
| KMM53632000BKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | 
| KMM53632000CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | 
| KMM53632000CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V | 
| KMM53632004BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V |