參數(shù)資料
型號: L9805
廠商: 意法半導(dǎo)體
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Super Smart Power Motor Driver with 8-BIT MCU, CAN Interface, 16K EPROM, 256Bytes RAM, 128 Bytes EEPROM, 10 Bit ADC, WDG, 2 Timers, 2 PWM Modules, Ful
中文描述: 超級智能型電動馬達(dá)驅(qū)動器,帶有8位微控制器,CAN接口,16K的存儲器,256Bytes RAM內(nèi)存,128字節(jié)EEPROM,10位ADC,水分散粒劑,2定時(shí)器,2個(gè)PWM模塊,涪陵
文件頁數(shù): 82/103頁
文件大?。?/td> 853K
代理商: L9805
82/103
L9805
5.9 EEPROM (EEP)
5.9.1 Introduction
The Electrically Erasable Programmable Read
Only Memory is used to store data that need a non
volatile back-up. The use of the EEPROM requires
a basic protocol described in this chapter.
Software or hardware reset and halt modes are
managed immediately, stopping the action in
progress. Wait mode does not affect the program-
ming of the EEPROM.
The Read operation of this memory is the same of
a Read-Only-Memory or RAM. The erase and pro-
gramming cycles are controlled by an EEPROM
control register.
The user can program 1 to 4 bytes at the same
programming cycle providing that the high part of
the address is the same for the bytes to be written
(only address bits A1 and A0 can change).
The EEPROM is mono-voltage. A charge pump
generates the high voltage internally to enable the
erase and programming cycles. The erase and
programming cycles are chained automatically.
The global programming cycle duration is control-
led by an internal circuit.
Figure 43. EEPROM Block Diagram
BUFFER
ROW
DECODER
4*8 BITS
DATA LATCHES
DATA
MULTIPLEXER
HIGH VOLTAGE PUMP
EEPROM
MEMORY
MATRIX
1 ROW = 4 * 8 BITS
ADDRESS
DECODER
ADDRESS
BUS
DATA
BUS
E2ITE E2LAT E2PGM
EEPCR
.
.
.
.
.
.
32
32
8
8
4
4
12
INTERRUPT
REQUEST
FALLING
EDGE
DETECTOR
8 bit
Read amplifiers
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