參數(shù)資料
型號: HYB25L512160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512MBit Mobile-RAM
中文描述: 512兆移動RAM
文件頁數(shù): 8/50頁
文件大?。?/td> 1335K
代理商: HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Overview
Data Sheet
8
Rev. 1.3, 2004-04
10212003-BSPE-77OL
1.2
Description
The HYB25L512160AC consists of two 256MBit high-speed CMOS, dynamic random-access memories each of
them containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM.
The HYB25L512160AC achieves high speed data transfer rates by employing a chip architecture that prefetches
multiple bits and then synchronizes the output data to the system clock. Read and write accesses are burst-
oriented; accesses start at a selected location and continue for a programmed number of locations (1, 2, 4, 8 or
full page) in a programmed sequence.
The device operation is fully synchronous: all inputs are registered at the positive edge of CLK.
The HYB25L512160AC is especially designed for mobile applications: it adds many features to save power, like
low operating voltages. Additionally, current consumption in self refresh mode can further be reduced by using the
programmable Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR).
A conventional data-retaining power down (PD) mode is available as well as a non-data-retaining deep power
down (DPD) mode.
The HYB25L512160AC is housed in a 54-ball “chip-size” FBGA package. It is available in Commercial (0°C to
70°C) temperature range.
Table 3
Type
1)
Commercial Temperature Range
HYB25L512160AC–7.5
Ordering Information
1) HYB: Designator for memory products (HYB: standard temp. range)
25L: 2.5V Mobile-RAM
512: 512 MBit density
160: 16 bit interface width
A: die revision
C : lead-containing product
Description
Package
133 MHz 2
×
4 Banks
×
4 Mbit
×
16 LP-SDRAM
FBGA-54
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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