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| 型號： | HYB25L512160AC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512MBit Mobile-RAM |
| 中文描述： | 512兆移動RAM |
| 文件頁數(shù)： | 38/50頁 |
| 文件大?。?/td> | 1335K |
| 代理商： | HYB25L512160AC |
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HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
38
Rev. 1.3, 2004-04
10212003-BSPE-77OL
Figure 42
WRITE with Auto Precharge Interrupted by READ
Figure 43
WRITE with Auto Precharge Interrupted by WRITE
3.4.9
The Mobile-RAM requires a refresh of all rows in a rolling interval. Each refresh is generated in one of two ways:
by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode.
AUTO REFRESH and SELF REFRESH
3.4.9.1
AUTO REFRESH
Figure 44
AUTO REFRESH Command
Auto Refresh is used during normal operation of the
Mobile-RAM. The command is nonpersistent, so it
must be issued each time a refresh is required. A
minimum row cycle time (t
RC
) is required between two
AUTO REFRESH commands. The same rule applies
to any access command after the auto refresh
operation. All banks must be precharged prior to the
AUTO REFRESH command.
The refresh addressing is generated by the internal
refresh controller. This makes the address bits “Don’t
Care” during an AUTO REFRESH command. The
Mobile-RAM requires AUTO REFRESH cycles at an
average periodic interval of 7.8 μs (max.). Partial
array mode has no influence on auto refresh mode.
WR-AP = Write with Auto Precharge; READ = Read with or without Auto Precharge
CL = 2 and Burst Length = 4 in the case shown
Write with Auto Precharge to bank n is interrupted by subsequent Read to bank m
= Don't Care
CLK
Command
NOP
NOP
NOP
READ
NOP
Address
Bank n
Col b
Bank m
Col x
NOP
NOP
WR-AP
t
WR
(bank n)
CL=2
t
RP
(bank n)
DQ
DO x
DO x+1
DO x+3
DO b+1
DO b
DO x+2
WR-AP = Write with Auto Precharge; WRITE = Write with or without Auto Precharge
Burst Length = 4 in the case shown
Write with Auto Precharge to bank n is interrupted by subsequent Write to bank m
= Don't Care
CLK
t
RP
(bank n)
DI x+1
t
WR
(bank n)
DI x+1
Command
NOP
NOP
NOP
WRITE
NOP
WR-AP
NOP
NOP
Address
Bank n
Col b
Bank m
Col x
DQ
DI b+1
DI b
DI x
DI x+1
= Don't Care
CS
CKE
(High)
CLK
A0-A12
BA0,BA1
CAS
WE
RAS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB25L512160AC-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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