參數(shù)資料
型號: HYB25L512160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512MBit Mobile-RAM
中文描述: 512兆移動RAM
文件頁數(shù): 39/50頁
文件大?。?/td> 1335K
代理商: HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
39
Rev. 1.3, 2004-04
10212003-BSPE-77OL
Figure 45
AUTO REFRESH
3.4.9.2
SELF REFRESH
Figure 46
SELF REFRESH Entry Command
The SELF REFRESH command can be used to retain
data in the Mobile-RAM, even if the rest of the system
is powered down. When in the SELF REFRESH
mode, the Mobile-RAM retains data without external
clocking. The SELF REFRESH command is initiated
like an AUTO REFRESH command except CKE is
LOW. Input signals except CKE and CLK are “Don’t
Care” during SELF REFRESH. CLK pin may not float.
The SELF REFRESH command may be issued to
both chips at the same time
(CS0 = CS1 = 0).
The procedure for exiting SELF REFRESH requires a
stable clock prior to CKE returning HIGH. Once CKE
is HIGH, NOP commands must be issued for t
RC
because time is required for a completion of any
internal refresh in progress.
The use of SELF REFRESH mode introduces the
possibility that an internally timed event can be
missed when CKE is raised for exit from SELF
REFRESH mode. Upon exit from SELF REFRESH an
extra AUTO REFRESH command is recommended.
Ba A, Row n = bank A, row n
t
RP
t
RC
t
RC
= Don't Care
DQ
High-Z
A10 (AP)
Row n
Pre All
Address
Ba A,
Row n
Command
NOP
ARF
NOP
NOP
NOP
NOP
PRE
ARF
ACT
CLK
= Don't Care
CS
CKE
CLK
A0-A12
BA0,BA1
CAS
WE
RAS
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相關代理商/技術參數(shù)
參數(shù)描述
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