參數(shù)資料
型號(hào)： HYB25L512160AC
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512MBit Mobile-RAM
中文描述： 512兆移動(dòng)RAM
文件頁(yè)數(shù)： 43/50頁(yè)
文件大小： 1335K
代理商： HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
43
Rev. 1.3, 2004-04
10212003-BSPE-77OL
5) The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied
on each positive clock edge during these states.
Refreshing:
Starts with registration of an AUTO REFRESH command and ends when
t
RC
is met. Once
t
RC
is met, the
SDRAM is in the “all banks idle” state.
Accessing Mode
Register:
Starts with registration of a MODE REGISTER SET command and ends when
t
MRD
has been met. Once
t
MRD
is met, the SDRAM is in the “all banks idle” state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
t
RP
is met. Once
t
RP
is met, all
banks are in the idle state.
6) All states and sequences not shown are illegal or reserved.
7) Not bank-specific; requires that all banks are idle and no bursts are in progress.
8) Same as NOP command in that state.
9) READs or WRITEs listed in the Command/Action column include READs or WRITEs with Auto Precharge enabled and
READs or WRITEs with Auto Precharge disabled.
10) May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
11) Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.
Table 15
Current State
Any
Current State Bank n - Command to Bank m (different bank)
CS
RAS CAS
WE
Command / Action
H
X
X
X
DESELECT (NOP / continue previous operation)
L
H
H
H
NO OPERATION (NOP / continue previous operation)
X
X
X
X
Any command otherwise allowed to bank n
Row Activating,
Active, or
Precharging
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Read (Auto-
Precharge
Disabled)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Write (Auto-
Precharge
Disabled)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Read
(with Auto-
Precharge)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Write
(with Auto-
Precharge)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Notes
1)2)3)4)5)6)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH and after
t
RC
has been met (if the previous state was Self
Refresh).
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is
allowable). Exceptions are covered in the notes below.
1) to 6)
Idle
1) to 6)
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
1) to 6)
1) to 7)
1) to 7)
1) to 6)
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
1) to 6)
1) to 7)
1) to 8)
1) to 6)
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
1) to 6)
1) to 7)
1) to 7)
1) to 6)
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
1) to 6)
1) to 7), 9)
1) to 9)
1) to 6)
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
1) to 6)
1) to 7), 9)
1) to 7), 9)
1) to 6)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25L512160AC-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
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HYB3116160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
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