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| 型號(hào)： | HYB25L512160AC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512MBit Mobile-RAM |
| 中文描述： | 512兆移動(dòng)RAM |
| 文件頁數(shù)： | 35/50頁 |
| 文件大?。?/td> | 1335K |
| 代理商： | HYB25L512160AC |
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HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
35
Rev. 1.3, 2004-04
10212003-BSPE-77OL
WRITE to PRECHARGE
A WRITE burst may be followed by, or truncated with a PRECHARGE command to the same bank (provided that
Auto Precharge was not activated), as shown in
Figure 37
.
The PRECHARGE command should be issued t
WR
after the clock edge at which the last desired data element of
the WRITE burst was registered. Additionally, when truncating a WRITE burst, DQM must be pulled to mask input
data presented during t
WR
prior to the PRECHARGE command. Following the PRE-CHARGE command, a
subsequent ACTIVE command to the same bank cannot be issued until t
RP
is met.
In the case of a WRITE being executed to completion, a PRECHARGE command issued at the optimum time (as
described above) provides the same operation that would result from the same WRITE burst with Auto Precharge
enabled. The disadvantage of the PRECHARGE command is that it requires that the command and address
busses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command
is that it can be used to truncate bursts.
Figure 37
WRITE to PRECHARGE Timing
3.4.7
BURST TERMINATE
.
Figure 38
BURST TERMINATE Command
The BURST TERMINATE command is used to
truncate READ or WRITE bursts (with Auto
Precharge disabled). The most recently registered
READ or WRITE command prior to the BURST
TERMINATE command will be truncated, as shown in
Figure 21
and
Figure 33
, respectively
Ba A, Col n = bank A, column n
DI n = Data In to column n
Burst Length = 4 in the case shown.
3 subsequent elements of Data In are provided in the programmed order following DI n.
DI n+3 is masked due to DQM pulled HIGH during t
WR
period prior to PRECHARGE command.
= Don't Care
DQ
DI n
DI n+1
DI n+2
t
RP
NOP
t
WR
NOP
CLK
DQM
Command
NOP
NOP
NOP
ACT
PRE
WRITE
Address
Ba A,
Col n
Ba A,
Row a
Ba A
Dis AP
Pre Bank A
Pre All
A10
(AP)
AP
AP = Auto Precharge
Dis AP = Disable Auto Precharge
= Don't Care
CAS
CS
CKE
(High)
CLK
A0-A12
BA0,BA1
WE
RAS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB25L512160AC-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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