參數(shù)資料
型號(hào)： HYB25L512160AC
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512MBit Mobile-RAM
中文描述： 512兆移動(dòng)RAM
文件頁(yè)數(shù)： 19/50頁(yè)
文件大?。?/td> 1335K
代理商： HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
19
Rev. 1.3, 2004-04
10212003-BSPE-77OL
Due to shared command, CLK and CKE pins of this stacked configuration, commands issued to one chip
may also impact the state of the second chip, even if that chip is actually deselected. Details can be found
in the command descriptions below.
3.4.1
No Operation (NOP)
Figure 9
No Operation Command
The NO OPERATION (NOP) command is used to
perform a NOP to a Mobile-RAM which is selected
(CS = LOW). This prevents unwanted commands
from being registered during idle states. Operations
already in progress are not affected.
3.4.2
The DESELECT function (CS = HIGH) prevents new commands from being executed by the Mobile-RAM. The
Mobile-RAM is effectively deselected. Operations already in progress are not affected.
When issuing an access command to one chip of this stacked configuration, the other chip shall be
deselected by asserting its corresponding CS pin HIGH.
DESELECT
Table 7
Parameter
Inputs Timing Parameters
Symbol
–7.5
min
7.5
9.5
9.5
—
—
2.5
2.5
1.5
0.8
Unit
Notes
max
Clock cycle time
V
DDQ
= 2.3V .. 3.6V
CL = 3
CL = 2
CL = 2 or 3
CL = 3
CL = 2 or 3
t
CK
—
—
—
133
105
—
—
—
—
ns
ns
ns
MHz
MHz
ns
ns
ns
ns
—
—
—
V
DDQ
= 1.65V .. 1.95V
V
DDQ
= 2.3V .. 3.6V
V
DDQ
= 1.65V .. 1.95V
Clock frequency
f
CK
f
CK
t
CH
t
CL
t
IS
t
IH
—
Clock high-level width
Clock low-level width
Address, data and command input setup time
Address, data and command input hold time
= Don't Care
WE
CAS
CS
CKE
(High)
CLK
A0-A12
BA0,BA1
RAS
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