參數(shù)資料
型號： HYB25L512160AC
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512MBit Mobile-RAM
中文描述： 512兆移動RAM
文件頁數(shù)： 24/50頁
文件大?。?/td> 1335K
代理商： HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
24
Rev. 1.3, 2004-04
10212003-BSPE-77OL
Figure 17
Single READ Burst (CAS Latency = 3)
Data from any READ burst may be concatenated with data from a subsequent READ command. In either case, a
continuous flow of data can be maintained. A READ command can be initiated on any clock cycle following a
previous READ command, and may be performed to the same or a different (active) bank. The first data element
from the new burst follows either the last element of a completed burst (
Figure 18
) or the last desired data element
of a longer burst which is being truncated (
Figure 19
). The new READ command should be issued x cycles after
the first READ command, where x equals the number of desired data elements.
Please note that truncation of a READ burst by a subsequent READ or WRITE is only possible when both
commands are issued to the same chip of this stacked configuration.
Figure 18
Consecutive READ Bursts
Ba A, Col n = bank A, column n
DO n = Data Out from column n
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n.
= Don't Care
CL=3
t
RCD
t
RP
t
RAS
t
RC
Command
NOP
READ
NOP
NOP
NOP
PRE
NOP
ACT
ACT
NOP
NOP
CLK
AP = Auto Precharge
Dis AP = Disable Auto Precharge
Address
A10 (AP)
Pre Bank A
Pre All
AP
Dis AP
DQ
DO n+1
DO n
DO n+2
DO n+3
Ba A,
Row b
Row b
Ba A,
Row x
Row x
Ba A,
Col n
Ba A, Col n (b) = Bank A, Column n (b)
DO n (b) = Data Out from column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data Out are provided in the programmed order following DO n (b).
= Don't Care
CLK
CL=2
CL=3
Command
NOP
READ
NOP
NOP
NOP
NOP
NOP
READ
NOP
Address
Ba A,
Col b
Ba A,
Col n
DQ
DO n+1
DO n
DO n+2
DO n+3
DO b+2
DO b
DO b+1
DQ
DO n+1
DO n
DO n+2
DO n+3
DO b+1
DO b
相關(guān)PDF資料
PDF描述
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HYB3116160BST-70 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25L512160AC-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
HYB3116160BSJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
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