參數(shù)資料
型號: HYB25L512160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512MBit Mobile-RAM
中文描述: 512兆移動RAM
文件頁數(shù): 40/50頁
文件大?。?/td> 1335K
代理商: HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
40
Rev. 1.3, 2004-04
10212003-BSPE-77OL
Figure 47
SELF REFRESH Entry and Exit
3.4.10
POWER DOWN
Figure 48
POWER DOWN Entry Command
Power-down is entered when CKE is registered LOW
(no accesses can be in progress). If power-down
occurs when all banks are idle, this mode is referred to
as precharge power-down; if power-down occurs when
there is a row active in any bank, this mode is referred
to as active power-down. Entering power-down
deactivates the input and output buffers, excluding
CKE and CLK. In power-down mode, CKE LOW must
be maintained, and all other input signals are “Don’t
Care”. However, power-down duration is limited by the
refresh requirements of the device (t
REF
).
The power-down state is synchronously exited when
CKE is registered HIGH (along with a NOP or
DESELECT command). One clock delay is required for
power down entry and exit.
Power-down entry and exit is common to both
stacked chips as they share a common CKE
signal.
Table 13
Parameter
Timing Parameters for AUTO REFRESH and SELF REFRESH
Symbol
– 7.5
Units
Notes
min.
67
19
1
max.
64
ACTIVE to ACTIVE command period
PRECHARGE command period
Refresh period (
8192
rows)
Self refresh exit time
t
RC
t
RP
t
REF
t
SREX
ns
ns
ms
t
CK
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
1)
1)
1)
t
RP
> t
RC
t
RC
t
RC
Self Refresh
Entry Command
Self Refresh
Exit Command
Exit from
Self Refresh
Any Command
(Auto Refresh
Recommended)
= Don't Care
t
SREX
A10 (AP)
Pre All
Row n
CLK
CKE
Command
NOP
ARF
NOP
NOP
NOP
PRE
ARF
ACT
NOP
Address
Ba A,
Row n
DQ
High-Z
= Don't Care
CS
CKE
CLK
RAS
A0-A12
BA0,BA1
WE
CAS
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