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| 型號： | HYB25L512160AC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512MBit Mobile-RAM |
| 中文描述： | 512兆移動RAM |
| 文件頁數(shù)： | 42/50頁 |
| 文件大小： | 1335K |
| 代理商： | HYB25L512160AC |
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HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
42
Rev. 1.3, 2004-04
10212003-BSPE-77OL
3.5
Function Truth Tables
Table 14
Current State
Any
Current State Bank n - Command to Bank n
CS
RAS CAS
H
X
X
L
H
H
L
L
H
L
L
L
L
L
L
L
L
H
L
H
L
L
H
L
L
L
H
L
H
L
L
H
L
L
L
H
L
H
H
L
H
L
L
H
L
L
L
H
L
H
H
WE
X
H
H
H
L
L
H
L
L
H
L
L
L
H
L
L
L
Command / Action
DESELECT (NOP / continue previous operation)
NO OPERATION (NOP / continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
MODE REGISTER SET
PRECHARGE
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate READ burst, start precharge)
BURST TERMINATE
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate WRITE burst, start precharge)
BURST TERMINATE
Notes
1)2)3)4)5)6)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH and after
t
RC
has been met (if the previous state was self
refresh).
2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are
those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3) Current state definitions:
Idle:
The bank has been precharged, and
t
RP
has been met.
Row Active:
A row in the bank has been activated, and
t
RCD
has been met. No data bursts/accesses and no register
accesses are in progress.
Read:
A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
Write:
A WRITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
4) The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or
allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable
commands to the other bank are determined by its current state and according to
Table 15
.
Precharging:
Starts with registration of a PRECHARGE command and ends when
t
RP
is met. Once
t
RP
is met, the bank
is in the “idle” state.
Row Activating: Starts with registration of an ACTIVE command and ends when
t
RCD
is met. Once
t
RCD
is met, the bank
is in the “row active” state.
Read with AP
Enabled:
Starts with registration of a READ command with Auto Precharge enabled and ends when
t
RP
has been
met. Once
t
RP
is met, the bank is in the idle state.
Write with AP
Enabled:
Starts with registration of a WRITE command with Auto Precharge enabled and ends when
t
RP
has been
met. Once
t
RP
is met, the bank is in the idle state.
1) to 6)
Idle
1) to 6)
1) to 7)
1) to 7)
1) to 6), 8)
Row Active
1) to 6), 9)
1) to 6), 9)
1) to 6), 10)
Read
(Auto-
Precharge
Disabled)
1) to 6), 9)
1) to 6), 9)
1) to 6), 10)
1) to 6), 11)
Write
(Auto-
Precharge
Disabled)
1) to 6), 9)
1) to 6), 9)
1) to 6), 10)
1) to 6), 11)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB25L512160AC-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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