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參數(shù)資料
| 型號： | HYB25L512160AC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512MBit Mobile-RAM |
| 中文描述： | 512兆移動RAM |
| 文件頁數(shù)： | 14/50頁 |
| 文件大?。?/td> | 1335K |
| 代理商： | HYB25L512160AC |
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HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
14
Rev. 1.3, 2004-04
10212003-BSPE-77OL
The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before
initiating the subsequent operation. Violating either of these requirements results in unspecified operation.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
3.2.1.1
READ and WRITE accesses to the Mobile-RAM are burst oriented, with the burst length being programmable. The
burst length determines the maximum number of column locations that can be accessed for a given READ or
WRITE command. Burst lengths of 1, 2, 4, 8 locations are available for both the sequential and interleaved burst
types, and a full-page burst mode is available for the sequential burst type.
When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected.
All accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary
is reached. The block is uniquely selected by A1-A8 when the burst length is set to two, by A2-A8 when the burst
length is set to four and by A3-A8 when the burst length is set to eight. The remaining (least significant) address
bit(s) is (are) used to select the starting location within the block.
Full page bursts wrap within the page if the boundary is reached. Please note that full page bursts do not self-
terminate; this implies that full-page read or write bursts with Auto Precharge are not legal commands.
Burst Length
Note:
1. For a burst length of two, A1-Ai select the two-data-element block; A0 selects the first access within the block.
2. For a burst length of four, A2-Ai select the four-data-element block; A0-A1 select the first access within the
block.
3. For a burst length of eight, A3-Ai select the eight-data-element block; A0-A2 select the first access within the
block.
4. For a full page burst, A0-Ai select the starting data element.
5. Whenever a boundary of the block is reached within a given sequence, the following access wraps within the
block.
Table 5
Burst
Length
Burst Definition
Starting Column Address
A2
A1
Order of Accesses Within a Burst
Sequential
0 - 1
1 - 0
0 - 1 - 2 - 3
1 - 2 - 3 - 0
2 - 3 - 0 - 1
3 - 0 - 1 - 2
0 - 1 - 2 - 3 - 4 - 5 - 6 - 7
1 - 2 - 3 - 4 - 5 - 6 - 7 - 0
2 - 3 - 4 - 5 - 6 - 7 - 0 - 1
3 - 4 - 5 - 6 - 7 - 0 - 1 - 2
4 - 5 - 6 - 7 - 0 - 1 - 2 - 3
5 - 6 - 7 - 0 - 1 - 2 - 3 - 4
6 - 7 - 0 - 1 - 2 - 3 - 4 - 5
7 - 0 - 1 - 2 - 3 - 4 - 5 - 6
Cn, Cn+1, Cn+2, ...
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
n
Interleaved
0 - 1
1 - 0
0 - 1 - 2 - 3
1 - 0 - 3 - 2
2 - 3 - 0 - 1
3 - 2 - 1 - 0
0 - 1 - 2 - 3 - 4 - 5 - 6 - 7
1 - 0 - 3 - 2 - 5 - 4 - 7 - 6
2 - 3 - 0 - 1 - 6 - 7 - 4 - 5
3 - 2 - 1 - 0 - 7 - 6 - 5 - 4
4 - 5 - 6 - 7 - 0 - 1 - 2 - 3
5 - 4 - 7 - 6 - 1 - 0 - 3 - 2
6 - 7 - 4 - 5 - 2 - 3 - 0 - 1
7 - 6 - 5 - 4 - 3 - 2 - 1 - 0
not supported
2
4
0
0
1
1
0
0
1
1
0
0
1
1
n
8
0
0
0
0
1
1
1
1
n
Full Page
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB25L512160AC-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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