參數(shù)資料
型號(hào): HYB25L512160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512MBit Mobile-RAM
中文描述: 512兆移動(dòng)RAM
文件頁(yè)數(shù): 41/50頁(yè)
文件大?。?/td> 1335K
代理商: HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
41
Rev. 1.3, 2004-04
10212003-BSPE-77OL
Figure 49
POWER DOWN Entry and Exit
3.4.10.1
The deep power down mode is an unique function on Low Power SDRAM devices with extremly low current
consumption. Deep power down mode is entered using the BURST TERMINATE command (cf.
Figure 38
) except
that CKE is LOW. All internal voltage generators inside the device are stopped and all memory data is lost in this
mode. To enter the deep power down mode all banks must be precharged.
The deep power down mode is asynchronously exited by asserting CKE HIGH. After the exit, the same command
sequence as for power-up initialization has to be applied before any other command may be issued (cf.
Figure 4
and
Figure 7
).
DEEP POWER DOWN
= Don't Care
Precharge Power Down mode shown: all banks are idle and tRP met
when Power Down Entry Command is issued
Any
Command
Power Down
Entry
t
RP
Exit from
Power Down
High-Z
DQ
A10 (AP)
Valid
Pre All
Address
Valid
Command
NOP
NOP
NOP
Valid
PRE
CKE
CLK
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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