參數(shù)資料
型號: HYB25L512160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512MBit Mobile-RAM
中文描述: 512兆移動RAM
文件頁數(shù): 16/50頁
文件大?。?/td> 1335K
代理商: HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
16
Rev. 1.3, 2004-04
10212003-BSPE-77OL
3.2.2.1
Partial Array Self Refresh is power-saving feature specific to Mobile-RAMs. With PASR, self refresh may be
restricted to variable portions of the total array. The selection comprises all four banks (default), two banks, one
bank, half a bank, and a quarter of one bank. Data written to the non activated memory sections will get lost after
a period defined by t
REF
(cf.
Table 13
).
Partial Array Self Refresh (PASR)
3.2.2.2
Temperature Compensated Self Refresh (TCSR) with On-Chip Temperature
Sensor
DRAM devices store data as a
electrical charge in tiny capacitors that require a periodic refresh in order to retain
the stored information. This refresh requirement heavily depends on the die temperature: high temperature
corresponds to short refresh period, and low temperature to long refresh period.
The Mobile-RAM is equipped with an on-chip temperature sensor which continuously monitors the current die
temperature and adjusts the refresh period in self refresh mode accordingly. By default the on-chip temperature
sensor is enabled (TCSR = 00, see
Figure 6
); the other three TCSR settings use defined temperature values to
adjust the self refresh period with the on-chip temperature sensor being disabled.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25L512160AC-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
HYB3116160BSJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3116160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh