參數(shù)資料
型號(hào): HYB25L512160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 512MBit Mobile-RAM
中文描述: 512兆移動(dòng)RAM
文件頁(yè)數(shù): 7/50頁(yè)
文件大?。?/td> 1335K
代理商: HYB25L512160AC
512MBit Mobile-RAM
HYB25L512160AC–7.5
Data Sheet
7
Rev. 1.3, 2004-04
10212003-BSPE-77OL
1
Overview
1.1
Features
2 x 4 banks x 4 Mbit x 16 organisation ( Two 256MBit chips stacked in multi-chip package)
Fully synchronous to positive clock edge
Four internal banks for concurrent operation
Programmable CAS latency: 2, 3
Programmable burst length: 1, 2, 4, 8 or full page
Programmable wrap sequence: sequential or interleaved
Auto refresh and self refresh modes
8192 refresh cycles / 64ms
Auto precharge
Operating temperature range
Commerical (0°C to +70°C)
54-ball FBGA package (12.0 mm x 8.0 mm x 1.4 mm)
Power Saving Features:
Low supply voltages:
V
DD
= 2.3V .. 3.6V, V
DDQ
= 1.65V .. 1.95V or 2.3V .. 3.6V
Optimized self refresh (ICC6) and standby currents (I
CC2
/ I
CC3
)
Programmable Partial Array Self Refresh (PASR)
Temperature Compensated Self-Refresh (TCSR), controllable by on-chip temperature sensor
Power-Down and Deep Power Down modes
Table 1
Part Number Speed Code
V
DDQ
Clock Frequency (
f
CKmax
)
Access Time (
t
ACmax
)
Clock Cycle Time (
t
CKmin
) CL = 3
Performance
–7.5
Unit
1.65 ...1.95
105
8.0
9.5
9.5
2.3 ...3.6
133
6.0
7.5
9.5
V
MHz
ns
ns
ns
CL = 2 or 3
CL = 2
Table 2
Item
Banks
Rows
Columns
Memory Addressing Scheme
Addresses
BA0, BA1
A0 - A12
A0 - A8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25L512160AC-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
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