參數(shù)資料
型號(hào)： HYB25L512160AC
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512MBit Mobile-RAM
中文描述： 512兆移動(dòng)RAM
文件頁數(shù)： 32/50頁
文件大小： 1335K
代理商： HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
32
Rev. 1.3, 2004-04
10212003-BSPE-77OL
Figure 31
Random WRITE Bursts
Non-consecutive WRITE bursts are shown in
Figure 32
Figure 32
Non-Consecutive WRITE Bursts
3.4.6.1
Data from any WRITE burst may be truncated using the BURST TERMINATE command (see
Page 35
), provided
that Auto Precharge was not activated. The input data provided coincident with the BURST TERMINATE
command will be ignored. This is shown in
Figure 33
. The BURST TERMINATE command may be used to
terminate a full-page WRITE which does not self-terminate.
WRITE Burst Termination
Ba A, Col n etc. = Bank A, Column n etc.
DI n etc. = Data In to column n etc.
Burst Length = 4 in the case shown; bursts are terminated by consecutive WRITE commands.
3 subsequent elements of Data In are provided in the programmed order following DI m .
= Don't Care
CLK
Command
NOP
NOP
NOP
NOP
NOP
WRITE
WRITE
WRITE
WRITE
Address
Ba A,
Col m
Ba A,
Col x
Ba A,
Col a
Ba A,
Col n
DQ
DI n
DI a
DI x
DI m
DI m+1
DI m+2
DI m+3
Ba A, Col n (b) = Bank A, Column n (b)
DI n (b) = Data In to column n (b)
Burst Length = 4 in the case shown.
3 subsequent elements of Data In are provided in the programmed order following DI n (b).
= Don't Care
CLK
WRITE
Command
NOP
NOP
NOP
NOP
NOP
NOP
NOP
WRITE
Ba A,
Col n
Address
Ba A,
Col b
DI b
DQ
DI n
DI n+1
DI n+2
DI n+3
DI b+1
DI b+2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25L512160AC-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
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HYB3116160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
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