參數(shù)資料
型號(hào)： HYB25L512160AC
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512MBit Mobile-RAM
中文描述： 512兆移動(dòng)RAM
文件頁(yè)數(shù)： 45/50頁(yè)
文件大?。?/td> 1335K
代理商： HYB25L512160AC
HYB25L512160AC–7.5
512MBit Mobile-RAM
Electrical Characteristics
Data Sheet
45
Rev. 1.3, 2004-04
10212003-BSPE-77OL
4
Electrical Characteristics
4.1
Absolute Maximum Ratings
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
4.2
DC Operation Conditions
Table 17
Parameter
Absolute Maximum Ratings
Symbol
Values
min.
-1.0
-1.0
-1.0
-1.0
0
-25
-55
—
—
Unit
max.
4.6
4.6
V
DDQ
+ 0.5
V
DDQ
+ 0.5
+70
+85
+150
0.7
50
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
V
DD
V
DDQ
V
IN
V
OUT
T
C
T
C
T
STG
P
D
I
OUT
V
V
V
V
°
C
°
C
°
C
W
mA
Commercial
Extended
Storage Temperature
Power Dissipation
Short Circuit Output Current
Table 18
Parameter
DC Characteristics
1)
1) 0
°
C
≤
T
C
≤
70
°
C (comm.);
All voltages referenced to
V
SS
.
V
SS
and
V
SSQ
must be at same potential.
2) Device is characterized for both ranges of V
DDQ
; V
DDQ
< V
DD
+0.3
3)
V
IH
may overshoot to
V
DD
+ 0.8 V for pulse width < 4 ns;
V
IL
may undershoot to -0.8 V for pulse width < 4 ns.
Pulse width measured at 50% with amplitude measured between peak voltage and DC reference level.
Symbol
Values
min.
2.3
1.65
or
2.30
0.8
×
V
DDQ
-0.3
V
DDQ
- 0.2
—
-5
-5
Unit Notes
max.
3.6
1.95
or
3.60
V
DDQ
+ 0.3
0.3
—
0.2
5
5
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
V
DD
V
DDQ
V
V
–
2)
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
V
V
V
V
μ
A
μ
A
3)
3)
–
–
–
–
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