| 型號(hào) | 廠商 | 描述 |
| km41464a-12 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464a-15 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464az-12 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464az-15 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464ap-12 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464ap-15 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464aj 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464aj-12 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464aj-15 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464ap 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km41464az 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
| km4164b 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE |
| km4164b-15 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE |
| km4164b-10 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE |
| km4164b-12 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE |
| km416c254dl 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) |
| km416v254dl 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) |
| km416c4000b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位CMOS 動(dòng)態(tài)RAM（帶快速頁(yè)模式）) |
| km416c4104b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) |
| km416c4004b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) |
| km416rd4c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM) |
| km416s1021ct-g7 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| km416s1021ct-g8 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| km416s1021ct-gs 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| km416s1120d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | 512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
| km416s16230a 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動(dòng)態(tài)RAM) |
| km416s4030c 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM |
| km416s4030ct-f10 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM |
| km416s4030ct-f7 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM |
| km416s4030ct-f8 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM |
| km416s4030ct-fh 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM |
| km416s4030ct-fl 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM |
| km416s4030ct-g 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM |
| km416v4004b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| km416v4004c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| km416v4100b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| km41v4000d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | RES,Film,0.33Ohms,250WV,200ppm-TC,4112-Case RoHS Compliant: Yes |
| km4211im8tr3 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp |
| km4211 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp |
| km4211im8 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp |
| km4211ic8 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Multiconductor Cable; Number of Conductors:9; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Features:Unshielded RoHS Compliant: Yes |
| km4211ic8tr3 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Multiconductor Cable; Number of Conductors:9; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Features:Unshielded; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| km4212ic8 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 70A, Low Cost, +2.7V & +5V, 7.3MHz Rail-to-Rail Amp |
| km4212ic8tr3 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 70A, Low Cost, +2.7V & +5V, 7.3MHz Rail-to-Rail Amp |
| km4212im8tr3 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 70A, Low Cost, +2.7V & +5V, 7.3MHz Rail-to-Rail Amp |
| km4212 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | Dual, 70A, Low Cost, +2.7V & +5V, 7.3MHz Rail-to-Rail Amp |
| km4212im8 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 70A, Low Cost, +2.7V & +5V, 7.3MHz Rail-to-Rail Amp |
| km4216c256 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K X 16 BIT CMOS VIDEO RAM |
| km4216v256 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K X 16 BIT CMOS VIDEO RAM |
| km4216c258 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16 Bit CMOS Video RAM(256K x 16 位 CMOS視頻RAM) |